PLCC44
Nonvolatile Program and Data Memories
– 8K Bytes of In-System Self-programmable Flash
Endurance: 10,000 Write/Erase Cycles
– Optional Boot Code Section with Independent Lock bits
In-System Programming by On-chip Boot Program
True Read-While-Write Operation
– 512 Bytes EEPROM
Endurance: 100,000 Write/Erase Cycles
– 512 Bytes Internal SRAM
– Up to 64K Bytes Optional External Memory Space
– Programming Lock for Software Security